| PART |
Description |
Maker |
| P2750 P2750-06 P2750-08 P3257-30 P3257-31 P3981 P3 |
0.2mW; allowable current:6mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:3mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
0.2mW; allowable current:50mA; MCT photoconductive detector: non-cooled type and TE-cooled suitable for long, continuous operation
|
Hamamatsu Corporation
|
| FDI030N06 |
N-Channel PowerTrench? MOSFET 60V, 193A, 3.2mW
N-Channel PowerTrench垄莽 MOSFET 60V, 193A, 3.2mW
|
Fairchild Semiconductor
|
| AN7100S |
Dual 2mW Audio Power Amplifier Circuit
|
Panasonic
|
| 2N3658 |
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
|
| BM4515-04W-B40 BM4515-04W-B50 |
Allowable Ambient Temperature Range
|
List of Unclassifed Manufacturers
|
| FBA09A12M FBA09A12L FBA09A12M1A FBA09A12H FBA09A12 |
Allowable Ambient Temperature Range
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| TSA5888CYRMG |
Low Vcesat PNP Transistor High allowable power dissipation.
|
Taiwan Semiconductor Company, Ltd
|
| 2N5207 |
MAXIMUM ALLOWABLE RATINGS
MAXIMUM ALLOWABLE RATINGS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
